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chemraz® greene tweed compounds


  • Compound Information
  • Literature
Chemraz® Compound
Elastomer
Hardness (Shore A)
Application
Color
Temp (°C)
FFKM
74
High Thermal Resistance, Low Compression Set (LPCVD, RTP, Thermal CVD, ALD)
Black
300°C
FFKM
67
Plasma Resistance in High Fluorine Environments. Deposition (CVD, PECVD, HDPCVD, PEALD), Plasma etch (fluorine species), Remote plasma cleans
Translucent Brown
300°C
FFKM
80
Good Plasma Resistance and Good Physical Properties, CVD, PVD, sputtering, evaporation, CVD, RPCVD, HDPCVD, APCVD, SACVD, DCVD, Dry plasma etch
White
210°C
FFKM
90
Withstands harsh chemistries and high sealing loads, Metallization, Deposition, Dry Plasma etch, Dry ashing
White
240°C
FFKM
80
Good Plasma Resistance and Good Physical Properties, Metallization, Deposition, Dry Plasma etch, Dry ashing
White
210°C
FFKM
75
Excellent Acid Resistance, Wet etch (acid, base), wet stripping (solvents), wet cleaning (UPDI), wet metal plating
Black
210°C
FFKM
80
Broad Chemical Compatibility, High Temperature, Wet etch , Wet photo resist strip, Wet Cleaning
Black
316°C
FFKM
70
Low contaminants, good physical properties, Wet etch (acid, base), wet stripping (solvents), wet cleaning (UPDI), wet metal plating, CMP
White
210°C
FFKM
80
Low contaminants, good physical properties, Wet etch (acid, base), wet stripping (solvents), wet cleaning (UPDI), wet metal plating, CMP
White
210°C
FFKM
80
Excellent Resistance to Plasma, good physical properties, Dry ashing, Oxidation, Metallization, Deposition, Dry plasma etch
White
240°C
FFKM
75
Minimal Particulation, High purity, Maximum Plasma Resistance, Deposition (CVD, PECVD, HDPCVD, PEALD), Dry Plasma etch
Translucent Ivory
260°C
FFKM
80
Minimal Particulation, High purity, Maximum Plasma Resistance, Deposition (CVD, PECVD, HDPCVD, PEALD), Dry Plasma etch
Translucent Ivory
260°C
FFKM
80
Minimal Particulation, High Purity, Maximum Plasma Resistance, Deposition (CVD, PECVD, HDPCVD, PEALD), Dry Plasma etch, RTP/diffusion
Brown
290°C
FFKM
75
Minimal contamination in Dry Plasma Processes, High Temperature, Dry plasma etch, Dry ashing
Dark Green
315°C
FFKM
80
High Temp, superior comp set, Excellent plasma resistance, Oxidation (LPCVD), Diffusion, RTP
Black
324°C
FFKM
82
High Temp, Minimal contamination, withstands aggressive chemicals, RTP, Oxidation (LPCVD), Diffusion
Off-White
315°C
FFKM
70
Bonded Slit Valve Gates, Very Low Metallic Ion Content, low sealing force, Deposition, Dry plasma etch, remote plasma cleans
Translucent
232°C
FFKM
80
Minimal Particulation, Maximum Plasma Resistance, Deposition, Dry plasma etch, remote plasma cleans
White
260°C
FFKM
65
Enhanced Performance in Dry O2 Based Plasma Etch, High Temp, low comp set
Burgundy
300°C
FFKM
70
Minimal contamination, low metal ion content, withstands aggressive chemicals, CVD, RPCVD, HDPCVD, APCVD, SACVD, DCVD, plasma cleans
White
260°C


RFQ



Chemraz® Greene Tweed Compounds, Semiconductor Compounds
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